Method for reducing poly-depletion in dual gate cmos fabrication process

ABSTRACT

Disclosed is a method for reducing poly-depletion in a dual gate CMOS fabrication process. The method reduces the poly-depletion in a dual gate CMOS fabrication process by increasing the doping efficiency in a gate polysilicon film. In order to increase the doping efficiency, the method employs the following four technical principles. First, the doping efficiency is increased when the dose of N+ ion implantation is increased. Second, the doping efficiency is increased when the thickness of N+ polysilicon is reduced. Third, the increase of depletion caused by the reduction of the channel width is inhibited when the EFH is adjusted to be less than 0. Fourth, the overall doping efficiency is increased when each step of polysilicon deposition and ion implantation is divided into multiple steps.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a method for fabricating asemiconductor device, and more particularly to a method for reducingpoly-depletion in a dual gate CMOS fabrication process.

2. Description of the Prior Art

As generally known in the art, MOSFET gates are formed poly-silicon withproperties required for a gate, such as high melting point, easyformation of a thin film, easy line patterning, stability in oxidizingatmosphere and planarization. Actually, polysilicon gates in a MOSFETcontain dopants, such as phosphorus (P), arsenic (As) and boron (B),thereby realizing a low resistance.

Conventional CMOS devices form N+ polysilicon gates in both NMOS andPMOS regions. However, a buried channel is formed by the count doping inthe PMOS region to adjust a proper threshold voltage, which May increaseshort channel effects resulting in the degradation of deviceperformance.

In an attempt to overcome such drawbacks, a dual gate CMOS which formsan N+ polysilicon gate in the NMOS region and a P+ polysilicon gate inthe PMOS region has recently been introduced.

The fabrication of a dual gate CMOS is a process employing N+polysilicon for the NMOS gate and P+ polysilicon for the PMOS gate. Theprocess generally comprises the steps of depositing an undoped amorphoussilicon (a-Si) or an undoped polysilicon (poly-Si) as a gate material,selectively implanting an N+ ion and a P+ ion into the NMOS and PMOSgates, respectively, and performing a thermal diffusion to uniformlydistribute dopants over the entire gate regions.

However, poly-depletion may occur during the conventional process offabricating a dual gate CMOS due to ion-implantation with aninsufficient dose or energy and in complete thermal diffusion.

The poly-depletion may be caused due to insufficient doping within apolysilicon film. Part of a voltage applied to the gate for channelinversion is applied to the depletion region at the polysilicon bottom,which consequently increases a threshold voltage Vt and the thickness ofa gate dielectric film while reducing an on current.

The level of depletion at the polysilicon bottom is highly dependent onthe thickness of polysilicon. Accordingly, the threshold voltage Vt hasa great variation over the entire wafer, which makes it difficult tomanage the proper target of the threshold voltage Vt and causes thereduction of yield.

Doping efficiency, as an index showing the poly-depletion level, isindicated by a percentage of the inversion gate capacitance relative tothe accumulation gate capacitance. Generally, appropriate dopingefficiency is about 95%. Such appropriate doping efficiency can bemaintained when suitable ion implantation conditions and thermal budgetare secured.

The poly-depletion may further increase due to narrowing of the gatelinewidth. In submicron devices having a gate length or width of lessthan 0.2 μm, poly-depletion caused by a short length and/or by a narrowwidth of gates is added to one-dimensional poly-depletion caused by avertical electric field in gates, thereby generating a three-dimensionalpoly-depletion effect. The 3D poly-depletion effect caused by thereduction of the gate length or width is based on the following twomechanisms.

The first mechanism is that additional depletions occur at the gatesidewalls due to the fringing gate fields. The additional depletions atthe gate sidewalls can be ignored when the gate is long. However, as thegate length is scaled down, the additional depletions increase and theaverage level of depletions in the entire channel also increases.Accordingly, doping efficiency is reduced as the gate length is shorter.(C. H. Choi, et al., IEEE Electron Device Letters, Vol. 23, No. 4, p.224, 2002)

FIGS. 1 a and 1 b are views for explaining the poly-depletion effectdepending on the gate linewidth, wherein drawing reference numeral “11”is provided for a silicon substrate, numeral “12” for a gate dielectricfilm, numerals “13 a” and “13 b” for polysilicon gates having differentlinewidths, numeral “14” for a depletion region and numeral “15” for asidewall region with additional depletion which is caused by a fringingfield.

As shown in the above drawings, sidewall depletions caused by thefringing gate fields are increased as the gate linewidth is reduced.Also, a narrow gate linewidth reduces the doping efficiency.

The second mechanism of the poly-depletion effect is that the reductionof channel width further increases the poly-depletion effect due toso-called TRISI-NWE (Trench Isolation Step-Induced-Narrow Width Effect)produced by STI (Shallow Trench Isolation). (Youngmin Kim, et al., IEEEElectron Device Letters, Vol. 23, No. 10, p. 600, 2002)

FIGS. 2 a and 2 b are views for explaining the poly-depletion effectdepending on the channel width, wherein drawing reference numeral “21”is provided for a silicon substrate numeral “22” for an STI oxide film,numerals “23 a” and “23 b” for channels and numeral “24” for apolysilicon film.

As shown in FIGS. 2 a and 2 b, the difference between the height of theSTI oxide film 22 and that of the silicon substrate 21, i.e., EFH(Effective Fox Height; height of field oxide measured at the top of thesilicon substrate), is generally a positive number. Accordingly, thepolysilicon film 24 becomes relatively thicker in border portions(indicated by oblique lines in the drawings) where it adjoins both theSTI oxide film 22 and the channel 23 a or 23 b, because of the conformaldeposition property of polysilicon.

As the polysilicon film 24 is getting thicker, the poly-depletion effectis further increased at the bottom of the polysilicon film 24 (below thedotted lines in the drawings).

As a result, the poly-depletion effect becomes more significant at theedges of the channel, which consequently reduces the channel width. Theaverage level of poly depletion over the channel is raised due to theincrease of the sidewall depletion, resulting in the reduction of thedoping efficiency.

The explained above are two representative mechanisms relating to thethree dimensional poly-depletion effect. The increased poly-depletioneffect increases the absolute value of the threshold voltage Vt and thevariation of the threshold voltage Vt within the wafer. Therefore, ashigher integration is pursued, it is required to reduce thepoly-depletion effect for the management of a stable threshold voltageVt.

Cell transistors used in FCMOS SRAM devices of less than 0.14 μm havechannel length and width of less than 0.2 μm that may bring aboutserious three-dimensional poly-depletion. Management of a stablethreshold voltage Vt for these transistors is of critical importance toa low voltage operation yield.

SUMMARY OF THE INVENTION

Accordingly, the present invention has been made to solve theabove-mentioned problems occurring in the prior art, and one object ofthe present invention is to provide a method for reducing poly-depletionin a dual gate CMOS fabrication process, which can improve the deviceperformance and product yield.

In order to accomplish the above object, there is provided a method forreducing poly-depletion in a dual gate CMOS fabrication process, themethod comprising the steps of: forming an STI oxide film at propersites of a silicon substrate having an NMOS forming region and a PMOSforming region; sequentially forming a gate dielectric film and apolysilicon film on the silicon substrate including the STI oxide film;selectively implanting an N-type impurity and a P-type impurity into theportions of the polysilicon film, which correspond respectively to theNMOS forming region and PMOS forming region of the silicon substrate, byion implantation; and patterning the polysilicon film having theselectively ion-implanted N-type and P-type impurities and the gatedielectric film to form an N+ polysilicon gate in the NMOS region of thesilicon substrate and a P+ polysilicon gate in the PMOS region of thesilicon substrate, wherein the ion implantation of the N-type impurityis performed by implanting phosphorus in a dose of 1 to 2×10¹⁶/cm².

The STI oxide film is formed higher than the surface of the siliconsubstrate. The polysilicon film has a thickness of 1900 to 2100 Å and isrelatively thicker at the border portions where it adjoins the STI oxidefilm and the silicon substrate.

In order to accomplish the above object, there is also provided a methodfor reducing poly-depletion in a dual gate CMOS fabrication process,comprising the steps of: forming an STI oxide film at proper sites of asilicon substrate having an NMOS forming region and a PMOS formingregion; sequentially forming a gate dielectric film and a polysiliconfilm on the silicon substrate including the STI oxide film; selectivelyimplanting an N-type impurity and a P-type impurity into the portions ofthe polysilicon film, which correspond respectively to the NMOS formingregion and PMOS forming region of the silicon substrate, by ionimplantation; and patterning the polysilicon film having the selectivelyion-implanted N-type and P-type impurities and the gate dielectric filmto form an N+ polysilicon gate in the NMOS region of the siliconsubstrate and a P+ polysilicon gate in the PMOS region of the siliconsubstrate, wherein the polysilicon film has a thickness ranging from1600 to 1800 Å.

In addition, there is provided a method for reducing poly-depletion in adual gate CMOS fabrication process, comprising the steps of: forming anSTI oxide film at proper sites of a silicon substrate having an NMOSforming region and a PMOS forming region; sequentially forming a gatedielectric film and a polysilicon film on the silicon substrateincluding the STI oxide film; selectively implanting an N-type impurityand a P-type impurity into the portions of the polysilicon film, whichcorrespond respectively to the MOS forming region and PMOS formingregion of the silicon substrate, by ion implantation; and patterning thepolysilicon film having the selectively ion-implanted N-type and P-typeimpurities and the gate dielectric film to form an N+ polysilicon gatein the NMOS region of the silicon substrate and a P+ polysilicon gate inthe PMOS region of the silicon substrate, wherein the height of the STIoxide film measured at the top of the silicon substrate is less or equalto 0.

To adjust the height of the STI oxide film, a target polishing amount ofCMP is increased when forming the STI oxide film. Alternatively, afterformation of the STI oxide film, wet etching is performed to recess thesurface of the STI oxide film.

In addition, there is provided a method for reducing poly-depletion in adual gate CMOS fabrication process, comprising the steps of: forming anSTI oxide film at proper sites of a silicon substrate having an NMOSforming region and a PMOS forming region; sequentially forming a gatedielectric film and a polysilicon film oh the silicon substrateincluding the STI oxide film; selectively implanting an N-type impurityand a P-type impurity into the portions of the polysilicon film, whichcorrespond respectively to the NMOS forming region and PMOS formingregion of the silicon substrate, by ion implantation; and patterning thepolysilicon film having the selectively ion-implanted N-type and P-typeimpurities and the gate dielectric film to form an N+ polysilicon gatein the NMOS region of the silicon substrate and a P+ polysilicon gate inthe PMOS region of the silicon substrate, wherein the formation of thepolysilicon film and the ion-implantation of the impurities are repeatedat least twice.

The polysilicon film is formed to have a final thickness ranging from1900 to 2100 Å which is identical to the sum of the thicknesses obtainedin every repeated formation of the polysilicon film.

The present invention can reduce poly-depletion by increasing the dopingefficiency in the polysilicon film, thereby achieving improvement of thedevice performance and product yield.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, features and advantages of the presentinvention will be more apparent from the following detailed descriptiontaken in conjunction with the accompanying drawings, in which:

FIGS. 1 a and 1 b are views for explaining the poly-depletion effectdepending on the gate linewidth.

FIGS. 2 a and 2 b are views for explaining the poly-depletion effectdepending on the channel width.

FIGS. 3 a to 3 d are cross-sectional views showing a process of reducingpoly-depletion in accordance with a first embodiment of the presentinvention.

FIG. 4 is a graph showing the doping efficiency according to the dose ofan ion-implanted impurity.

FIG. 5 is a graph showing the distribution of threshold voltages ofaccess and driver transistors in a wafer according to the dose of aion-implanted N-type impurity.

FIGS. 6 a and 6 b are cross-sectional views showing a process ofreducing poly-depletion in accordance with a third embodiment of thepresent invention.

FIGS. 7 a to 7 e are cross-sectional views showing a process of reducingpoly-depletion in accordance with fourth embodiment of the presentinvention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, preferred embodiments of the present invention willdescribed with reference to the accompanying drawings. In the followingdescription and drawings, the same reference numerals are used todesignate the same or similar components, and, so repetition of thedescription on the same or similar components will be omitted.

The present invention is based on the following four technicalprinciples to increase the doping efficiency. First, the dopingefficiency is increased when the dose of N+ ion implantation isincreased. Second, the doping efficiency is increased when the thicknessof N+ polysilicon is reduced. Third, the increase of depletion caused bythe reduction of the channel width is inhibited when the EFH is adjustedto be less than 0. Fourth, the overall doping efficiency is increasedwhen each step of polysilicon deposition and ion implantation is dividedinto multiple steps.

Hereinafter, methods of reducing poly-depletion based on the abovetechnical principles will be explained in more detail.

First Embodiment

FIGS. 3 a to 3 d are cross-sectional views showing process of reducingpoly-depletion according to the first embodiment of the presentinvention.

Referring to FIG. 3 a, a silicon substrate 31 having NMOS and PMOSforming regions is provided. AN STI oxide film 32 is formed in the fieldregions of the silicon substrate 31 by a known STI process. Accordingly,an active region 33 where an NMOS and a PMOS will be formed is defined.The STI oxide film 32 is formed higher than the surface of the activeregion 33 of the silicon substrate 31.

Referring to FIG. 3 b, a gate dielectric film (not shown) is formed onthe upper surface of the silicon substrate 31 including the STI oxidefilm 32. Subsequently, a gate polysilicon film 34 having a thickness of1900 to 2100 Å, preferably 2000 Å, is deposited on the gate dielectricfilm. Because of a positive EFH between the surface of the STI oxidefilm 32 and that of the active region 33 of the silicon substrate 31,the polysilicon film 34 is deposited more thickly at the border portions(indicated by oblique lines) where it adjoins the STI oxide film 32 andthe active region 33. Additional depletions may occur at such thickerportions of the polysilicon film due to the reduction of the channelwidth.

Referring to FIG. 3 c, an N+ ion implantation mask 35 is formed on thepolysilicon film 34 by a known process. Subsequently, an N-typeimpurity, preferably phosphorus, is ion-implanted into the region of thepolysilicon film which is not covered by the N+ ion implantation mask35. In the prior art, phosphorus is implanted in a dose of about5×10¹⁵/cm² (=5E15) for the N+ ion implantation. In the presentinvention, however, phosphorus is implanted in a dose of about 1 to2×10¹⁶/cm², preferably 1×10¹⁶/cm² (=1E16). The higher dose inhibits thepoly-depletion effect, thereby reducing a threshold voltage Vt variationand improving the yield.

Referring to FIG. 3 d, the resulting structure formed by the aboveprocesses is heated to a temperature higher than 800° C. for thermaldiffusion of the ion-implanted impurities. At this time, the thermaldiffusion occurs below the dotted line in the portion indicated by theoblique lines. This implies that the depletion at the gate sidewalls isreduced.

FIG. 4 is a graph showing the doping efficiency according to the dose ofan ion-implanted N-type impurity, wherein “A” is a case that the N+impurity has been ion-implanted in a dose of 5E15 and “B” is a case thatthe N+ impurity has been ion-implanted in a dose of 1E16.

The graph shows that ion-implantation 1E16 dose further increases dopingefficiency, compared to the ion-implantation of 5E15 dose. In otherwords, the prior art that implants 5E15 dose brings about an additionalreduction of doping efficiency due to the reduction of the gate length.However, the present invention implanting 1E16 dose does not reduce thedoping efficiency despite the reduction of the gate length.

FIG. 5 is a graph showing the distribution of threshold voltages ofaccess and driving transistors in a wafer according to the dose of anion-implanted N-type impurity. These two transistors are both NMOStransistors having a gate length of less than 0.2 μm and a narrow gatewidth of about 0.2 μm, which can generate three-dimensionalpoly-depletion. The dose of 1E16 reduces the threshold voltage Vtvariation, as compared to the dose of 5E15. Particularly, a tail thatappears at a cumulative distribution above 90% is not detected in thecase of 1E16 dose. This shows that the 1E16 dose can secure managementof a stable threshold voltage Vt.

Also, when compared to the 5E15 dose, the 1E16 dose can improve theyield due to the reduction of the bit fail.

Second Embodiment

The second embodiment of the present invention reduces the thickness ofthe N+ polysilicon film to be smaller than that of the conventionalpolysilicon film, thereby increasing the doping efficiency in the N+polysilicon film. More specifically, in the prior art, a gatepolysilicon film is deposited in a thickness of 1900 to 2100 Å,preferably 2000 Å. However, the present invention deposits the gatepolysilicon film in a reduced thickness of 1600 to 1800 Å.

Since the subsequent N+ ion implantation is performed in a relativelyreduced thickness of the polysilicon film, the doping efficiency in thepolysilicon film is increased to the contrary. Accordingly, thepoly-depletion effect can be reduced.

Third Embodiment

FIGS. 6 a and 6 b are cross-sectional views showing a process ofreducing poly-depletion according to the third embodiment of the presentinvention, wherein drawing reference numeral “61” is provided for asilicon substrate, numeral “62” for an STI oxide film, numeral “63” foran active region and numeral “64” for a polysilicon film.

The third embodiment reduces poly-depletion by adjusting the EFH to beless than 0.

FIG. 6 a shows a case that the EFH is 0. Since the thickened portion ofthe polysilicon film 64 is confined within an STI moat region, noadditional depletion occurs at the channel edge region.

FIG. 6 b shows a case that the EFH is less than 0. SinCe the polysiliconfilm 64 has thickened portions outside the channel due to its conformaldeposition property, no additional poly-depletion occurs at the channeledge region.

In order to adjust the EFH to be less than 0, the target polishingamount of CMP (Chemical Mechanical. Polishing), which is performed aftergap filling to form the STI oxide film 62, is increased. Alternatively,wet etching is additionally performed prior to the formation of the gatedielectric film to recess the surface of the STI oxide film 62. If theEFH is excessively lowered, the threshold voltage will likely be reduceddue to so-called INWE. Therefore, it is significant to determine aproper EFH.

Fourth Embodiment

According to the fourth embodiment, deposition of the polysilicon filmand ion implantation are performed at least twice to increase dopingefficiency and thereby reduce poly-depletion.

FIGS. 7 a to 7 e are cross-sectional views showing a process of reducingpoly-depletion according to the fourth embodiment.

Referring to FIG. 7 a, an STI oxide film 72 that defines an activeregion 73 is formed at the field regions of a silicon substrate 71having NMOS and PMOS forming regions by a known process. Subsequently, agate dielectric film (not shown) is formed on the silicon substrate 71including the STI oxide film 72. A first polysilicon film 74 a isdeposited on the gate dielectric film. The thickness of the firstpolysilicon film 74 a is half of the thickness of a whole gatepolysilicon film which will finally be formed. For example, when thethickness of the finally formed gate polysilicon film is 1900 to 2100 Å,preferably 2000 Å, the first polysilicon film 74 a should have a halfthickness of 1000 Å. A reduced thickness of the polysilicon film willreduce the thickening at the channel edges.

Referring to FIG. 7B, a first N+ ion implantation mask 75 is formed onthe first polysilicon filth 74 a. Subsequently an N-type impurity,preferably phosphorus, is ion-implanted into the portion of thepolysilicon film which is not covered by the first N+ ion implantationmask 75. The drawing reference numeral “76” refers to the N+ ionimplanted region. The dotted line is the boundary of the N+ ionimplanted region.

During the phosphorus ion implantation, the ion implantation energyshould be reduced to correspond to the reduced thickness of thepolysilicon film. The reduction of the ion implantation energy reducesthe vertical straggle, ΔRp. Accordingly, it is possible to obtain a moresteep ion implantation profile. Since a larger dose can diffuse to thebottom of the polysilicon film in a subsequent thermal diffusion step,the overall doping efficiency can be increased.

Referring to FIG. 7 c, the first N+ ion implantation mask is removed. Asecond polysilicon film 74 b is then deposited on the first polysiliconfilm 74 a in a thickness calculated by subtracting the thickness of thefirst polysilicon film 74 a from the desired thickness of the finalpolysilicon film. For example, the second polysilicon film 74 b has athickness of 1000 Å.

Referring to FIG. 7 d, a second N+ ion implantation mask is formed onthe second polysilicon film 74 b. Subsequently, phosphorus ision-implanted into the portion of the second polysilicon, film 74 bwhich is not covered by the second N+ ion implantation mask 77, withenergy corresponding to the reduced thickness of the second polysiliconfilm. The drawing reference numeral “78” refers to the N+ ion implantedregion. The dotted line is the boundary of the N+ ion implanted region.

Referring to FIG. 7 e, the second N+ ion implantation mask is removed.The resulting structure formed by the above processes is annealed forthermal diffusion of the dopants ion-implanted into the first and secondpolysilicon films 74 a and 74 b. At this time, depletion actually occursbelow the dotted line in the portion indicated by the oblique lines.Also, the overall doping efficiency is increased within the first andsecond polysilicon films 74 a and 74 b.

As explained above, the present invention reduces poly-depletion byincreasing the doping efficiency in a gate polysilicon film during thefabrication of a dual gate CMOS. In addition, the present invention canimprove the device performance and increase the manufacturing yield.

Although preferred embodiments of the present invention have beendescribed for illustrative purposes, those skilled in the art willappreciate that various modifications, additions and substitutions arepossible, without departing from the scope and spirit of the inventionas disclosed in the accompanying claims.

1. A method for reducing poly-depletion in a dual gate CMOS fabricationprocess, comprising the steps of: forming an STI oxide film at propersites of a silicon substrate having an NMOS forming region and a PMOSforming region; sequentially forming a gate dielectric film and apolysilicon film on the silicon substrate including the STI oxide film;selectively implanting an N-type impurity and a P-type impurity into theportions of the polysilicon film, which correspond respectively to theNMOS forming region and PMOS forming region of the silicon substrate, byion implantation; and patterning the polysilicon film having theselectively ion-implanted N-type and P-type impurities and the gatedielectric film to form an N+ polysilicon gate in the NMOS region of thesilicon substrate and a P+ polysilicon gate in the PMOS region of thesilicon substrate, wherein the formation of the polysilicon film and theion-implantation of the impurities are repeated at least twice.
 2. Themethod according to claim 1, wherein said polysilicon film has a finalthickness ranging from 1900 to 2100 Å.
 3. The method according to claim2, wherein said final thickness of the polysilicon film is identical tothe sum of the thicknesses obtained in every repeated polysilicon filmformation.